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The properties of chalcogenide phase change materials have long attracted the scientific community due to a combination of state retention (i.e., memory) and a large contrast in electrical and optical properties between different solid phases. The last decade has witnessed a vast interest in utilizing this material family for optics and photonics, given their large refractive index modulation, nonvolatility—elusive in optics—and straightforward integration into photonic devices. Thus, designing new optical phase change materials (O-PCMs) and demonstrating high-performance applications have become fast-growing research topics. However, advances in O-PCMs have predominantly followed empirical device developments, driven by their promise in trending technological applications. Nonetheless, a growing interest in revealing their materials science intricacies is driving the much-needed effort toward a holistic understanding and codesign of O-PCMs, which is required to fill knowledge gaps, expand the materials library, and solve the most pressing device performance challenges. 

Chalcogenide phase-change materials (PCMs) offer a promising approach to programmable photonics thanks to their nonvolatile, reversible phase transitions and high refractive index contrast. However, conventional designs are limited by global phase control over entire PCM thin films between fully amorphous and fully crystalline states, which restricts device functionality and confines design flexibility and programmability. In this work, we present a novel approach that leverages pixel-level control of PCM in inverse-designed photonic devices, enabling highly reconfigurable, multi-functional operations. We integrate low-loss Sb2Se3 onto a multi-mode interferometer and achieve precise, localized phase manipulation through direct laser writing. This technique allows for flexible programming of the photonic device by adjusting the PCM phase pattern rather than relying on global phase states, thereby enhancing device adaptability. As a proof of concept, we programmed the device as a wavelength-division multiplexer and subsequently reconfigured it into a mode-division multiplexer. Our results underscore the potential of combining inverse design with pixel-wise tuning for next-generation programmable phase-change photonic systems. 

The integration of computing with memory is essential for distributed, massively parallel, and adaptive architectures such as neural networks in artificial intelligence (AI). Accelerating AI can be achieved through photonic computing, but it requires nonvolatile photonic memory capable of rapid updates during on-chip training sessions or when new information becomes available during deployment. Phase-change materials (PCMs) are promising for providing compact, nonvolatile optical weighting; however, they face limitations in terms of bit precision, programming speed, and cycling endurance. Here, we propose a novel photonic memory cell that merges nonvolatile photonic weighting using PCMs with high-speed, volatile tuning enabled by an integrated PN junction. Our experiments demonstrate that the same PN modulator, fabricated via a foundry-compatible process, can achieve dual functionality. It supports coarse programmability for setting initial optical weights and facilitates high-speed fine-tuning to adjust these weights dynamically. The result shows a 400-fold increase in volatile tuning speed and a 10,000-fold enhancement in efficiency. This multifunctional photonic memory with volatile and nonvolatile capabilities could significantly advance the performance and versatility of photonic memory cells, providing robust solutions for dynamic computing environments. 

Abstract Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and scalability but mostly limited to a binary response. Recent works have demonstrated electrical multi-level switching; however, they relied on the stochastic nucleation process to achieve partial crystallization with low demonstrated repeatability and cyclability. Here, we re-engineer waveguide-integrated microheaters to achieve precise spatial control of the temperature profile (i.e., hotspot) and, thus, switch deterministic areas of an embedded phase change material cell. We experimentally demonstrate this concept using a variety of foundry-processed doped-silicon microheaters on a silicon-on-insulator platform to trigger multi-step amorphization and reversible switching of Sb₂Se₃and Ge₂Sb₂Se₄Te alloys. We further characterize the response of our microheaters using Transient Thermoreflectance Imaging. Our approach combines the deterministic control resulting from a spatially resolved glassy-crystalline distribution with the scalability of electro-thermal switching devices, thus paving the way to reliable multi-level switching towards robust reprogrammable phase-change photonic devices for analog processing and computing. 

Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technologies. We report direct-write and rewritable photonic circuits on a low-loss phase-change material (PCM) thin film. Complete end-to-end PICs are directly laser-written in one step without additional fabrication processes, and any part of the circuit can be erased and rewritten, facilitating rapid design modification. We demonstrate the versatility of this technique for diverse applications, including an optical interconnect fabric for reconfigurable networking, a photonic crossbar array for optical computing, and a tunable optical filter for optical signal processing. By combining the programmability of the direct laser writing technique with PCM, our technique unlocks opportunities for programmable photonic networking, computing, and signal processing. Moreover, the rewritable photonic circuits enable rapid prototyping and testing in a convenient and cost-efficient manner, eliminate the need for nanofabrication facilities, and thus promote the proliferation of photonics research and education to a broader community. 

We experimentally demonstrate the first electrically programmable, non-volatile silicon photonic content addressable memory cell using Sb₂Se₃phase change material on microring resonators, opening the path for light-based search operations in zero-power look-up tables. 

Bragg gratings offer high-performance filtering and routing of light on-chip through a periodic modulation of a waveguide’s effective refractive index. Here, we model and experimentally demonstrate the use of Sb₂Se₃, a nonvolatile and transparent phase-change material, to tune the resonance conditions in two devices which leverage periodic Bragg gratings—a stopband filter and Fabry-Perot cavity. Through simulations, we show that similar refractive indices between silicon and amorphous Sb₂Se₃can be used to induce broadband transparency, while the crystalline state can enhance the index contrast in these Bragg devices. Our experimental results show the promise and limitations of this design approach and highlight specific fabrication challenges which need to be addressed in future implementations.